Structural irregularities in the body of an IGBT module can cause immediate or eventual electrical failure. These irregularities may be detected by three-dimensional acoustic micro imaging. A lack of ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...

New York, United States , Jan. 31, 2023 (GLOBE NEWSWIRE) -- The Global Insulated Gate Bipolar Transistor [IGBT] Market Size is to grow from USD 5 billion in 2021 to USD 10 billion by 2030, at a ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Cissoid is broadening its range of standard products with multiple new families of power modules. Designed to address the growing demand for robust, efficient, and flexible solutions in automotive, ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...